HG 2SC2879C

The HG 2879C is an NPN silicon power transistor designed for SSB linear power amplifier applications in the 2-30MHz frequency range. It is manufactured by HG Semiconductor (HuaGao) as an alternative to the original Toshiba 2SC2879 transistor, though it’s important to note it is not a direct, drop-in replacement for the Toshiba part and requires an amplifier designed specifically for the HG 2879C.
Key Specifications
According to various merchant and manufacturer descriptions, the key specifications of the HG 2879C transistor include:
Transistor Type: NPN Bipolar Junction Transistor (BJT).
Application: Primarily for 2-30MHz Single Sideband (SSB) linear power amplifier applications in low supply voltage use (typically 12.5V).
Output Power (PO): Minimum 150W PEP (Peak Envelope Power) at 28MHz (some sources list 100W typical for the original Toshiba version).
Power Gain (Gp): Minimum 10.8 dB at 28MHz (some sources list 15.2 dB typical).
Collector Current (IC): Maximum 25A continuous.
Collector-Emitter Voltage (VCEO): Maximum 18V.
Collector-Base Voltage (VCBO): Maximum 45V.
Features: Utilizes an Omnigold™ Metalization System for durability.

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