2SC1969

***NEW OLD STOCK

The 2SC1969 is a silicon NPN epitaxial planar type transistor primarily designed for RF power amplifiers in HF band mobile radio applications, such as CB radios operating at 27 MHz. It is known for its high power gain and ability to withstand load mismatches.
Key Specifications
According to various datasheets, the key specifications for the 2SC1969 transistor (in a TO-220 case) include the following:
Collector-Base Voltage (VCBO): 60V
Collector-Emitter Voltage (VCEO): 25V
Emitter-Base Voltage (VEBO): 5V
Collector Current (IC): 6A
Collector Power Dissipation (PC): 20W (at Tc=25°C)
Operating Frequency: 27 MHz
Output Power (PO): 16W (typical, at Vcc=12V, Pin=1W)
DC Current Gain (hFE): 10-180 (at VCE=12V, IC=10mA)
Collector Efficiency: Typically 60-70%
Mounting Type: Through Hole
Packaging Type: TO-220
Replacement Options
The original Mitsubishi 2SC1969 transistor is no longer in production, and many “fake” versions exist online, particularly from China. Original units are considered New Old Stock (NOS) and can be rare.