HG 2SC2879

The HG2879 transistor is an NPN silicon bipolar junction transistor (BJT) manufactured by HG (HuaGao) Semi, primarily designed for RF amplification applications in the 2-30 MHz range, and is considered a replacement for the discontinued Toshiba 2SC2879.
Key Specifications
According to datasheets available from sources, the key specifications for the 2SC2879 transistor series (including the HG versions) are as follows:
Configuration: Single NPN BJT.
Collector-Base Voltage (VCBO): 45 V.
Collector-Emitter Voltage (VCEO): 18 V.
Collector Current (IC): 25 A maximum.
Collector Power Dissipation (PDISS): 250 W maximum.
Operating Frequency: 2-30 MHz for SSB linear power amplifier applications.
Output Power: Typically 100 W PEP (Peak Envelope Power) at 28 MHz and 12.5 V supply voltage.
Power Gain (Gp): Typically 15.2 dB at 100 W/28 MHz.
Applications
The HG2879 is engineered for high-frequency (HF) and very high-frequency (VHF) communication systems.
RF Amplification: It is widely used in linear power amplifiers for applications like citizen band (CB) radios and amateur (ham) radio transmitters.
SSB Communication: Its characteristics make it suitable for Single Side Band (SSB) linear power amplifier applications, known for low distortion when properly tuned.

Contact us for >100 lot pricing. This is priced each, image is not the actual product sold.