HG 2SC2312

The HG 2SC2312 is a silicon NPN epitaxial planar type RF power transistor widely used as a replacement in CB and amateur radios. It is an alternative to the original Mitsubishi 2SC2312 and other similar transistors like the 2SC1969.
Specifications and Use
The HG 2SC2312 is specifically designed for linear amplifiers operating in the HF band, making it suitable for the output stages of 27MHz AM/SSB transceiver sets.
Type: NPN silicon epitaxial planar type transistor.
Application: RF power amplification, especially in CB and 10-meter radios.
Max Ratings (at Tc=25°C):
Collector-Base Voltage (Vcb): 60 V.
Collector-Emitter Voltage (Vce): 20 V.
Power Dissipation (Pc): 25 W.
Collector Current (Ic): 6 A.
Features: Praised for delivering strong output, low distortion, and dependable efficiency. It is known to be robust, similar in quality to the original OEM parts