2SC2166

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The 2SC2166 is a silicon NPN epitaxial planar type transistor primarily designed for RF power amplifiers in HF band mobile radio applications, such as CB radios. It is known for its high power gain and reliability due to its emitter ballasted construction.
Key Specifications
According to various datasheets, the Mitsubishi 2SC2166 transistor has the following typical specifications:
Transistor Type: NPN
Package Type: TO-220
Collector-Base Voltage (VCBO): 45-75 V
Collector-Emitter Voltage (VCER): 45-75 V (RBE = 10Ω)
Emitter-Base Voltage (VEBO): 4 V
Collector Current (IC): 4 A
Collector Power Dissipation (Pc): 12.5 W (@Tc=25°C)
Operating Temperature Range: -55°C to +150°C
Frequency Range: 27 MHz
Power Rating: 6 W (output power at f=27MHz, Vcc=12V)
Equivalent Transistors
Due to the original Mitsubishi 2SC2166 being discontinued and the prevalence of counterfeit parts online, several equivalent and replacement transistors are available:
ERF-2030: A direct mechanical drop-in replacement that is an upgrade over the original 2SC2166, rated for 25 watts.
2SC2078: A silicon NPN transistor suitable for RF amplification in applications up to 30 MHz.
2SC2312: Another high-frequency NPN transistor often used in HF band transmitters, though also commonly counterfeited.
NTE-236: A recommended replacement part number.