HG 2SC2290

The HG2290 transistor is an NPN epitaxial planar silicon transistor manufactured by HuaGao (HG) as a direct replacement for the original Toshiba 2SC2290, designed for HF band SSB linear power amplifier applications.
Key Specifications
According to datasheets and product descriptions, the HG2290 shares the specifications of the Toshiba 2SC2290:
Type: Silicon NPN Epitaxial Planar Type
Application: 2 to 30 MHz SSB linear power amplifier applications
Output Power: Minimum 60W PEP (Peak Envelope Power)
Power Gain: Minimum 11.8 dB (typically 13.8 dB) at 28 MHz
Collector Efficiency: Minimum 35%
Maximum Collector Current: 20 A
Maximum Collector-Emitter Voltage (VCEO): 18 V
Maximum Collector Power Dissipation: 175 W (at Tc = 25°C)
Features: Utilizes an Omnigold™ metalization system

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