2N2907

The 2N2907 is a popular silicon planar epitaxial PNP Bipolar Junction Transistor (BJT). It is widely used in electronic circuits for high-speed switching and general-purpose low-power amplification. Core Specifications As of 2026, the following characteristics typically define the 2N2907: Transistor Polarity: PNP (conduction occurs when the base is negative relative to the emitter).Collector-Emitter Voltage (\(V_{CEO}\)): Typically 40V to 60V.Continuous Collector Current (\(I_{C}\)): Up to 600 mA. Power Dissipation (\(P_{D}\)): 400 mW at \(T_{A}=25^{\circ }C\).DC Current Gain (\(h_{FE}\)): Ranges from 100 to 300 at \(150\text{\ mA}\).Transition Frequency (\(f_{T}\)): 200 MHz, making it suitable for frequencies into the VHF range. Package Types: Commonly found in TO-18 metal cases or TO-92 plastic packages. Pin Configuration The standard 2N2907 (TO-18 or TO-92) has three pins: Emitter: Current flows out from the emitter. Base: Controls the biasing of the transistor. Collector: Current flows in through the collector. Common Applications High-Speed Switching: Used in digital circuits and logic gates due to its fast response. Signal Amplification: Ideal for amplifying low-power audio or signal inputs. Voltage Regulation: Employed in power supply circuits to maintain steady voltage. Complementary Pair: Often used with the 2N2222 (NPN) in push-pull amplifier configurations.