2SC1945

Rare, New Old Stock

The Mitsubishi 2SC1945 is a silicon NPN epitaxial planar RF power transistor designed for use in HF band mobile radio applications. It comes in a TO-220 package.
Key Specifications
According to various datasheets and sources, here are the key specifications for the 2SC1945 transistor:
Parameter Rating Unit
Collector-Base Voltage (VCBO) 80 V
Collector-Emitter Voltage (VCEO) 40 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 6 A
Collector Power Dissipation (PD) 20 W
DC Current Gain (hFE) 10-180 (at VCE=10V, IC=100mA) –
Junction Temperature (TJ) 150 °C
Transition Frequency (fT) 75 MHz
Applications
The 2SC1945 is a versatile transistor primarily designed for high-frequency applications, including:
RF power amplifiers on the HF band (e.g., 10 to 14 watts output power class AB amplifiers at 27MHz).
Switching and amplifier circuits in various electronic devices.
Display and driver circuits.